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SUP/SUB65P04-15
Vishay Siliconix
SPECIFICATIONS (T J = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V DS
V GS(th)
I GSS
V GS = 0 V, I D = - 250 μA
V DS = V GS , I D = - 250 μA
V DS = 0 V, V GS = ± 20 V
- 40
-1
-3
± 100
V
nA
V DS = - 40 V, V GS = 0 V
-1
Zero Gate Voltage Drain Current
I DSS
V DS = - 40 V, V GS = 0 V, T J = 125 °C
- 50
μA
V DS = - 40 V, V GS = 0 V, T J = 175 °C
- 250
On-State Drain Current a
I D(on)
V DS = - 5 V, V GS = - 10 V
V GS = - 10 V, I D = - 30 A
- 120
0.012
0.015
A
Forward Transconductance
Drain-Source On-State Resistance a
a
R DS(on)
g fs
V GS = - 10 V, I D = - 30 A, T J = 125 °C
V GS = - 10 V, I D = - 30 A, T J = 175 °C
V GS = - 4.5 V, I D = - 20 A
V DS = - 15 V, I D = - 50 A
20
0.018
0.024
0.030
0.023
Ω
S
Dynamic b
Input Capacitance
C iss
5400
Gate-Source Charge
Gate-Drain Charge
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge c
c
c
C oss
C rss
Q g
Q gs
Q gd
V GS = 0 V, V DS = - 25 V, f = 1 MHz
V DS = - 20 V, V GS = - 10 V, I D = - 65 A
640
300
85
25
15
130
pF
nC
Turn-On Delay Time
c
t d(on)
15
25
Rise Time c
Turn-Off Delay Time
c
t r
t d(off)
V DD = - 20 V, R L = 0.3 Ω
I D ? - 65 A, V GEN = - 10 V, R G = 2.5 Ω
380
75
580
115
ns
Fall Time c
t f
140
210
Source-Drain Diode Ratings and Characteristics (T C = 25 °C) b
Continuous Current
Pulsed Current
I S
I SM
- 65
- 240
A
Forward Voltage a
Reverse Recovery Time
Peak Reverse Recovery Charge
Reverse Recovery Charge
V SD
t rr
I RM(REC)
Q rr
I F = - 65 A, V GS = 0 V
I F = - 65 A, dI/dt = 100 A/μs
- 1.2
40
2
0.04
- 1.5
80
4
0.1
V
ns
A
μC
Notes:
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 71174
S11-2308-Rev. B, 21-Nov-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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